2N5172 0.5 a, 25 v npn plastic encapsulated transistor elektronische bauelemente 29-dec-2010 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ? ? ? base ? ? emitte r collector ? ? rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? general purpose amplifier transistor absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 25 v collector to emitter voltage v ceo 25 v emitter to base voltage v ebo 5 v collector current - continuous i c 0.5 a collector power dissipation p c 625 mw thermal resistance, junction to ambient r ja 200 c / w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min typ max unit test condition collector to base breakdown voltage v (br)cbo 25 - - v i c =0.01ma, i e =0a collector to emitter breakdown voltage v (br)ceo 25 - - v i c =10ma, i b =0a emitter to base br eakdown voltage v (br)ebo 5 - - v i e =0.01ma, i c =0a collector cut-off current i cbo - - 0.1 a v cb =25v, i e =0a emitter cut-off current i ebo - - 0.1 a v eb = 5v, i c =0ma dc current gain h fe 100 - 500 v ce =10v, i c =10ma collector to emitter saturation voltage v ce(sat) - - 0.25 v i c =10ma, i b =1ma base to emitter sa turation voltage v be(sat) 0.5 - 1.2 v v ce =10v, i c =10ma to-92 ref. millimete r min. max. a 4.40 4.70 b 4.30 4.70 c 12.70 - d 3.30 3.81 e 0.36 0.56 f 0.36 0.51 g 1.27 typ. h 1.10 - j 2.42 2.66 k 0.36 0.76 a c e k f d b g h j ? emitte r ? collector ? base
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